|Affiliation||Electrical,Electronic and Communication Engineering|
My specialties are semiconductor engineering and crystal growth. Particularly my interests are silicon (Si)-related semiconductor materials, such as germanium (Ge) and SiGe alloys.
Today’s highly advanced electronics has been established by continual developments of the Si LSI based on miniaturization (scaling) of physical sizes of metal-oxide-semiconductor field-effect-transistors (MOSFETs), the most elementary devises in the LSI. However, serious problems have been imposed recently, such as the scaling limit and immense power consumptions due to very dense electric interconnections.
My research group is conducting several research subjects to overcome this problem imposed in the Si microelectronics field. One activity is the channel engineering of MOSFETs. By introducing new materials as alternatives to the Si channel, we aim to realize higher carrier mobilities in the channel, which can bring device performance improvements without the size scaling. To this end, we introduce germanium (Ge) as the channel material. An essential key technology we have is the crystal growth of high quality Ge thin films (5~20 nm thickness) on Si with molecular beam epitaxy (MBE) technique. This so-called Ge nano structure creates a quantum well which can confine carriers and enhance their mobility thanks to quantum effects. Moreover, our epitaxy technology enables the crystal strain engineering, which can further increase the mobility. Thus, these technologies to fabricate nano structures can highly boost electronic device performances.
Another research activity is development of Si-based photonic devices, such as light emitters, photo detectors, waveguides etc., on the Si platform toward realization of optoelectronic integrated circuits (OEIC), where electric circuits can be replaced by optical ones, leading to significant performance enhancements and reduction of power consumption. The most difficult and challenging technology is the creation of Si light emitters since the light emission from Si is naturally very poor. However, we have succeeded in the strong light emission by means of forming a high quality strained Ge on Si. The induced strain can modify the Ge band structure, resulting in enhancements of light emission efficiencies. We have been developing light emitting diode (LED) based on the strained Ge-on-Si, and very recently we have succeeded in obtaining very strong current-injected light-emission form the Ge-LED at room temperature, which is a promising result toward realization of on-chip optical interconnections.
I received the Ph.D. degrees in applied physics from the University of Tokyo, Japan, in 2005. The Ph.D. thesis concerned the development of high-quality strained Si/Ge heterostructures and their transport properties. In 2005, I joined Research Center for Silicon Nano-Science, Advanced Research Laboratories (ARL), Musashi Institute of Technology as an Assistant Professor. Since 2016, I have been a Professor at Department of Electrical Electronic Engineering in Tokyo City University (formerly M. I. Tech.). I have also been a group leader of Research Center for Nano-Electronics in ARL.
|Research Field(Keyword & Summary)||
|Award||2009 JJAP (Japanese Journal of Applied Physics) Young Scientist Award
2010 Paper Award, The magnetics Society of Japan
2011 JSAP Silicon Technology Division Young Scientist Award
2018 JSAP Silicon Technology Division Paper Award
|Grant-in-Aid for Scientific Research Support: Japan Society for Promotion of Science (JSPS)||https://nrid.nii.ac.jp/ja/nrid/1000090409376/|
|Affiliated academic society (Membership type)||JSAP|
|Education Field (Undergraduate level)||Semiconductor devices, Optics engineering|
|Education Field (Graduate level)||Nano electronics, Advanced devises|