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Reseacher

Name ISHIKAWA Ryousuke
Official Title Professor
Affiliation Faculty of Science and Engineering, Department of Electrical and Electronic Communication Engineering Advanced Research Laboratory
E-mail rishikaw@tcu.ac.jp
Web
  1. https://www.arl.tcu.ac.jp/en/research/future.html
  2. https://researchmap.jp/ebina01music?lang=en
Profile Tokyo Institute of TechnologyFaculty of ScienceChemistry 2005 Graduated
Tokyo Institute of TechnologyGraduate School, Division of Science and EngineeringChemistry 2007 Completed
Tokyo Institute of TechnologyGraduate School, Division of Science and EngineeringElectrical and Electronic Engineering 2012 Completed
Research Field(Keyword & Summary)
  1. solar cell, atomic layer material

  2. Manufacturing Technology (Mechanical Engineering, Electrical and Electronic

  3. Engineering, Chemical Engineering)：Electric and electronic materials

  4. Nanotechnology/Materials：Nano/micro-systems

  5. Nanotechnology/Materials：Energy chemistry

Representative Papers
  1. Doping graphene films via chemically mediated charge transfer R Ishikawa, M Bando, Y Morimoto, A Sandhu Nanoscale research letters 6, 1-5 (2011)
  2. Perovskite/graphene solar cells without a hole-transport layer R Ishikawa, S Watanabe, S Yamazaki, T Oya, N Tsuboi ACS Applied Energy Materials 2 (1), 171-175 (2019)
  3. Grating-coupled surface plasmon resonance enhanced organic photovoltaic devices induced by Blu-ray disc recordable and Blu-ray disc grating structures S Nootchanat, A Pangdam, R Ishikawa, K Wongravee, K Shinbo, K Kato, F Kaneko, S Ekgasit, A Baba Nanoscale 9 (15), 4963-4971 (2017)
  4. Layer dependency of graphene layers in perovskite/graphene solar cells R Ishikawa, S Yamazaki, S Watanabe, N Tsuboi Carbon 172, 597-601 (2012)
  5. Widegap CH3NH3PbBr3 solar cells for optical wireless power transmission application R Ishikawa, T Kato, R Anzo, M Nagatake, T Nishimura, N Tsuboi, ... Applied Physics Letters 117 (1), 013902 (2020)
  6. Effect of annealing on doping of graphene with molybdenum oxide R Ishikawa, S Watanabe, H Nishida, Y Aoyama, T Oya, T Nomoto, ... Applied Physics Express 11 (4), 045101 (2018)
  7. Photovoltaic characteristics of GaSe/MoSe2 heterojunction devices R Ishikawa, PJ Ko, R Anzo, CL Woo, G Oh, N Tsuboi Nanoscale Research Letters 16 (1), 1-7 (2021)
  8. Fabrication of metal/oxide/fluorographene/oxide/silicon capacitors and their charge trapping properties R Kawashima, H Nohira, R Ishikawa, Y Mitani Japanese Journal of Applied Physics 62 (SG), SG1035 (2023)
  9. Flexible bifacial amorphous Si quintuple‐and sextuple‐junction solar cells for Internet of Things devices M Konagai, H Noge, R Ishikawa Progress in Photovoltaics: Research and Applications 29 (7), 668-674 (2021)
  10. Numerical simulation of edge effects in silicon hetero-junction solar cells Y Ichikawa, R Ishikawa, M Konagai AIP Advances 12 (6), 065006 (2022)
Patent
  1. US2011/0143101A1"Graphene Structure, Method for producing the same electronic device element and electronic device"
Award International Association of Advanced Materials (IAAM), IAAM Young Scientist 2018
Grant-in-Aid for Scientific Research Support: Japan Society for Promotion of Science (JSPS) https://nrid.nii.ac.jp/ja/nrid/1000050637064/
Research Grants/Projects including subsidies, donations, grants, etc. Green Innovation, Development of Next-Generation Solar Cells 2022-2025
NEDO, Development of Technologies to Promote Photovoltaic Power Generation as a Primary Power Source 2020-2024
JST-MIRAI project, "Low Carbon Society" mission area
Affiliated academic society (Membership type) The Japan Photovoltaic Society (General Affair)
The Japan Society of Applied Physics (Member)
JSAP Young Researcher Chapter, Photovoltaic energy conversion functional materials and device development study group (Auditor)
Education Field (Undergraduate level) Electrical and Electronic Communication Engineering
Education Field (Graduate level) Semiconductor Physics

Affiliation